PART |
Description |
Maker |
PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
MJ13333_D ON1977 MJ13333 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400-500 VOLTS 175 WATTS From old datasheet system 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
|
ON Semiconductor Motorola, Inc
|
BC817-16W Q62702-C2320 Q62702-C2323 Q62702-C2324 Q |
RES FIX, 324 OHM.125W 1% SMDA 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN Silicon AF Transistor (For general AF applications High collector current High current gain) 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
MJW16206 |
POWER TRANSISTORS 12 AMPERES 1200 VOLTS - VCES 50 and 150 WATTS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
MJ10016 ON1971 MJ10015 |
NPN SILICON POWER DARLINGTON TRANSISTORS 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS From old datasheet system
|
MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
PZTA06 MMBTA06 MPSA06 |
NPN General Purpose Amplifier(NPN通用放大 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
BSX20CSM BSX20CSM-JQR-AG4 |
500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR Bipolar NPN Device in a Hermetically sealed LCC1
|
SEMELAB LTD Seme LAB
|
CMR05C2R5DODP CMR04C2R5DODP CMR04F271GPCR CMR05C12 |
CAPACITOR, MICA, 500 V, 0.0000025 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 300 V, 0.00027 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.000012 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.00022 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.00016 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.00015 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.00013 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.00012 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.0002 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.00018 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.000024 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.00024 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.000062 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.012 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.0012 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.024 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.027 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.002 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, MICA, 500 V, 0.00039 uF, THROUGH HOLE MOUNT RADIAL LEADED CAP,Mica,6pF,500VDC,.5-pF Tol,.5 Tol,-200,200ppm-TC CAPACITOR, MICA, 500 V, 0.000006 uF, THROUGH HOLE MOUNT
|
Cornell Dubilier Electronics, Inc.
|
2SB1516F5/NP 2SA1727F5/NP 2SD1918F5/NP 2SD1767T101 |
3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.7 A, 80 V, NPN, Si, POWER TRANSISTOR 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 5 A, 20 V, PNP, Si, POWER TRANSISTOR 1 A, 32 V, NPN, Si, POWER TRANSISTOR 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
International Rectifier, Corp. Dielectric Laboratories, Inc.
|
APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS 7 R MOSFET
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
|