| PART |
Description |
Maker |
| SPD30P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 75m
|
Infineon
|
| BSP613P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.13
|
Infineon
|
| BSP171P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
| SPU30P06P SPD30P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 75m
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| STP90NF03L_05 STB90NF03L-1 STP90NF03L STP90NF03L05 |
N-channel 30V - 0.0056Ω -90A TO-220/I2PAK Low gate charge STripFET?/a> Power MOSFET
N-channel 30V - 0.0056ヘ -90A TO-220/I2PAK Low gate charge STripFET⑩ Power MOSFET
|
http://
STMICROELECTRONICS[STMicroelectronics]
|
| FDD050N03B |
N-Channel PowerTrenchMOSFET 30V, 90A, 5.0m
|
Fairchild Semiconductor
|
| UT90N03 UT90N03G-TM3-T UT90N03G-TN3-R UT90N03G-TQ2 |
90A, 30V N-CHANNEL(D-S) POWER MOSFET
|
Unisonic Technologies
|
| IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
| SPP42N03S2L-13 SPB42N03S2L-13 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.6mOhm, 42A, LL
|
Infineon
|
| BUZ32 BUZ32SMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
|
