| PART |
Description |
Maker |
| SPD3900 SPD3901 SPD3902 SPD3903 SPD SPDS SPD3899 R |
20 Amp 50-400 Volt 120 nsec FAST RECOVERY RECTIFIER
|
Solid States Devices, Inc
Solid States Devices, I...
|
| SDR1190 |
(SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER
|
Solid States Devices
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| SGB30UFSMS SGB10UFSMS SGB15UFSMS SGB20UFSMS SGB25U |
60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SAM50FA |
0.5 AMP 5000 VOLTS 150 nsec HIGH VOLTAGE RECTIFIER
|
Solid States Devices, Inc
|
| SUM35UF |
0.4 AMPS 2000 - 5000 VOLTS 60 nsec HIGH VOLTAGE ULTRA FAST RECTIFIER
|
http://
|
| SGB35UFSMSS SGB35UFSMSTX SGB35UFSMSTXV SGB10UFSMS |
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
0.06 A, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| SHM100UF |
50-250 mA 1500-14000 VOLTS 60-100 nsec HIGH VOLTAGE RECTIFIER 0.1 A, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| IDT72T1875L4-4BB IDT72T1865L4-4BBI IDT72T1885L4-4B |
2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 2.5伏高速TeraSync先进先出18-BIT/9-BIT配置
2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 2.5伏高TeraSync先进先出18-BIT/9-BIT配置
2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 128K X 18 OTHER FIFO, 3.4 ns, PBGA240
2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 4K X 18 OTHER FIFO, 3.4 ns, PBGA144
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| APT15S20BCT ABT15S20BCT APT15S20BCTG |
MOSFET
HIGH VOLTAGE SCHOTTKY DIODE
Schottky Center Tap RECTIFIER; Package: TO-247 [B]; VR (V): 200; IO (A): 15; VF (V): 0.8; trr (nsec): 20; Qrr (nC): 440;
|
Advanced Power Technology Ltd.
MICROSEMI POWER PRODUCTS GROUP
|
| AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM
From old datasheet system
1-megabit (64K x 16) 5-volt Only Flash Memory
1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
|
