PART |
Description |
Maker |
HUFA75637P3 HUFA75637S3S HUFA75637S3ST |
44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET 44 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 44A, 100V, 0.030 Ohm, N-Channel, UltraFETPower MOSFET
|
Fairchild Semiconductor, Corp.
|
802-90-002-10-002000 801-93-001-10-002000 801-93-0 |
INTERCONNECTS .100隆卤 Grid (.030隆卤 dia.) Low Profile Headers & Versatile Sockets Single and Double Row INTERCONNECTS .100 Grid (.030 dia.) Low Profile Headers & Versatile Sockets Single and Double Row INTERCONNECTS .100?/a> Grid (.030?/a> dia.) Low Profile Headers & Versatile Sockets Single and Double Row
|
Mill-Max Mfg. Corp.
|
HUF75637S3S HUF75637P3 HUF75637S3ST |
44A, 100V, 0.030 Ohm,N-Channel, UltraFET Power MOSFET 44A, 100V, 0.030 Ohm, N-Channel, UltraFETPower MOSFET 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
F.LL.D3.075A.BN.R1 |
520 V, 50/60 HZ, THREE PHASE EMI FILTER
|
KEMET ELECTRONICS CORP
|
FN256-120-35H |
520 V, 60 HZ, THREE PHASE EMI FILTER
|
|
IRFP150N FN4844 RFP150N |
44A/ 100V/ 0.030 Ohm/ N-Channel Power MOSFET 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET From old datasheet system
|
INTERSIL[Intersil Corporation]
|
LD-520-50SG |
Direct Emitting Green Laser Diode 520 nm 50 mW single Transverse Mode Structure: GaN
|
Roithner LaserTechnik GmbH
|
KB4647R62 |
KB4647R62 (KLB-520 R-08-T) is a high bright AlInGaP red LED and has the optimized optical characteristics.
|
KODENSHI KOREA CORP.
|
450-3718 |
Solder mount socket, for .030 (0,76) to .032 (0,81) diameter pins
|
CAMBION Electronic Components
|
IRFP150N |
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
|
Fairchild Semiconductor
|
SFF70N10Z SFF70N10M |
70 AMP 600 VOLT 0.030 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|