| PART |
Description |
Maker |
| APT10M25BVFR APT10M25 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 100V 75A 0.025 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| IRFR9120 IRFU9120 FN3987 |
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
P Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
|
| IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| RJK1056DPB RJK1056DPB-15 |
100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
100V, 25A, 14m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| STD6N10 STD6N10-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-251
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| HUF76633S3S HUF76633P3 HUF76633S3ST HUF76633S3STNL |
38A,100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 39A条（丁）|63AB
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Intersil, Corp.
|
| FQP90N10V2 FQPF90N10V2 |
100V N-Channel Advanced QFET V2 series
100V N-Channel MOSFET 90 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR |
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
(IRFR120N / IRFU120N) HEXFET Power MOSFET
HEXFET® Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
|
| FQI44N10 FQB44N10 FQB44N10TM |
100V N-Channel QFET
100V N-Channel MOSFET 43.5 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STP50NE10 6035 |
N-channel 100V - 0.021 - 50A TO-220 STripFET Power MOSFET
N - CHANNEL 100V - 0.021ohm - 50A TO-220 STripFET POWER MOSFET
From old datasheet system
N-channel 100V - 0.021з - 50A TO-220 STripFET⑩ Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
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