| PART |
Description |
Maker |
| JANTXV1N1204A JANTX1N1206A JANTX1N1204AR |
Military Silicon Power Rectifier 12 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA
Military Silicon Power Rectifier 12 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA
|
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| 99016 99016-1N2153 |
Military Silicon Power Rectifier 6 A, 600 V, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| DVST2800TSERIES |
COTS Converters:Military Designs for Military Applications COTS的转换器：用于军事用途的军事设计
|
Vishay Intertechnology, Inc.
|
| UZ7706 UZ7706L UZ806 UZ7210 |
POWER ZENERS 6 Watt, Military, 10 Watt Military
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| 1N5551 JANTXV1N5553 JAN1N5550 JAN1N5552 JAN1N5553 |
Military approved Amp，General Purpose 5 A, SILICON, RECTIFIER DIODE
MSTBVA 2,5/22-G-5,08
RECTIFIERS MILITARY APPROVED, 5 AMP, GENERAL PURPOSE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| SBT250-10JS |
100V, 25A Rectifi er
|
Sanyo Semicon Device
|
| APT50DL60BCT APT50DL60BCTG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| APT50DL60B APT50DL60BG APT50DL60S APT50DL60SG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| APT2X101DL40J |
Ultrafast Soft Recovery Dual Rectifi er Diode
|
Microsemi Corporation
|
| ESS RWR89Z EGN-10-10 EGN-10-80 EGN-1-10 EGN-1-80 E |
Wirewound Resistors, Military/Established Reliability
Military/Established Reliability, MIL-R-39007 Qual., Type RWR, R Level, Meets Solvent Resistance of MIL-STD-202 (Method 215), 100% Power Stabilization and Screening Test
(RWRxxx) Wirewound Resistors Military/Established Reliability
RESISTOR, WIRE WOUND, 5 W, 0.1 %, 20 ppm, 909 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 0.1 %, 20 ppm, 931 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
http://
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
|
