| PART |
Description |
Maker |
| CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36 / 1兆位× 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| CY7C1386F-167BGXC CY7C1386F-167BGXI CY7C1386F-200B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| CY7C1386D-250AXC ICY7C1387D-167BGI ICY7C1387D-167B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| CY7C1378C-166AXC CY7C1378C-166AXI CY7C1378C-200AXC |
9-Mbit (256K x 32) Pipelined SRAM with NoBL Architecture
9-Mbit (256K x 32) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor
|
| CY7C1352G06 CY7C1352G-250AXC CY7C1352G-250AXI CY7C |
4-Mbit (256K x 18) Pipelined SRAM with NoBL⑩ Architecture
4-Mbit (256K x 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| CY7C1350G06 CY7C1350G-250BGXI CY7C1350G-250BGXC CY |
4-Mbit (128K x 36) Pipelined SRAM with NoBL⑩ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL?/a> Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| CY7C1304CV25-100BZC CY7C1304CV25-167BZC CY7C1304CV |
9-Mbit Burst of 4 Pipelined SRAM with QDR(TM)Architecture
9-Mbit Burst of 4 Pipelined SRAM with QDR垄芒 Architecture
9-Mbit Burst of 4 Pipelined SRAM with QDR Architecture
9-Mbit Burst of 4 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
