| PART |
Description |
Maker |
| AA038N1-99 |
261 GHz Low Noise Amplifier
26-41 GHz Low Noise Amplifier
GT 4C 4#4 PIN PLUG
|
Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
|
| CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| AA028N1-00 |
240 GHz GaAs MMIC Low Noise Amplifier
GT 14C 10#12 4#16 PIN PLUG
24-30 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries Inc
Alpha Industries, Inc.
ALPHA[Alpha Industries]
http://
|
| TLT-8-2015 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated
|
| PE15A1000 |
1.5 dB NF, 10 mW, 1 GHz to 2 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| CLA-18-6005 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
|
| PE15A1002 |
2 dB NF, 20 mW, 4 GHz to 8 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| CLA-13-6015 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
| ATF-13100 ATF-13100-GP3 |
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
