PART |
Description |
Maker |
K7R643684M K7R641884M |
2Mx36 & 4Mx18 QDRTM II b4 SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
GS8662S09E-167I |
72Mb Burst of 2 DDR SigmaSIO-II SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
GS8662T09E-333 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
K7I643684M-EI25 K7I643684M-EI30 K7I641884M-CI30 K7 |
72Mb DDRII SRAM Specification 72Mb SRAM的规范条DDRII
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
GS8644ZV18B GS8644ZV18E-166I GS8644ZV18B-250 GS864 |
72Mb NBT SRAMs 72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
GS8640ZV18T-250I GS8640ZV18GT-167I GS8640ZV18T-300 |
72Mb NBT SRAMs 72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
IDT72T40108L6-7BB IDT72T40118L6-7BB IDT72T40118L6- |
64K x 40 TeraSync DDR FIFO, 2.5V 128K x 40 TeraSync DDR FIFO, 2.5V 2.5 VOLT HIGH-SPEED TeraSync?? DDR/SDR FIFO 40-BIT CONFIGURATION 16K x 40 TeraSync DDR FIFO, 2.5V 32K x 40 TeraSync DDR FIFO, 2.5V
|
IDT
|
HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66 DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66 512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 16M X 16 DDR DRAM, 0.7 ns, PBGA60 Double Data Rate (DDR) SDRAM
|
Micron Technology
|
GS864032 GS864018 GS864036 |
72Mb Burst SRAMs
|
GSI Technology
|
GS864418 |
72Mb Burst SRAMs
|
GSI Technology
|
GS8641ZV18 GS8641ZV32 GS8641ZV36 GSITECHNOLOGY-GS8 |
72Mb NBT SRAMs
|
GSI Technology
|