| PART |
Description |
Maker |
| 2N4125TANL |
PNP General Purpose Amplifier 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| CSC2001 CSA952 CSA952K CSA952L CSA952M CSA9529AW C |
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 180 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 135 - 270 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 200 - 400 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 400 hFE
PNP EPITAXIAL PLANAR SILICON TRANSISTOR 进步党平面外延硅晶体
|
Continental Device India Limited
CDIL
Continental Device India, Ltd.
|
| MBT3906DW1T1G MBT3906DW1T1 |
Dual General Purpose Transistor 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
Dual General Purpose Transistors
|
ONSEMI[ON Semiconductor]
|
| R6101020 R6101030 R6110420 R6100420 R6100425 R6100 |
General Purpose Rectifier (200-300 Amperes Average 1200 Volts) 通用整流器（200-300安培平均1200伏特
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
Powerex Power Semiconductor...
|
| CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712
LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一c）| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
| PN3638 PN3638A MPS3638A MPS3638 FTSO3638 FTSO3638A |
PNP Small Signal General Purpose Amplifiers & Switches
PNP General Purpose Amplifier
PNP high speed saturated logic switche.
NPN general purpose small signal amplifier.
|
FAIRCHILD[Fairchild Semiconductor]
|
| BC856 BC857 |
General Purpose Transistor PNP Silicon(-65V通用型硅PNP晶体 通用硅晶体管进步党（- 65V的通用型硅晶体管进步党
General Purpose Transistor PNP Silicon(-45V??????PNP?朵?绠?
|
ON Semiconductor
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation
Toshiba Semiconductor
|
| PMBT3906VS |
40 V, 200 mA PNP/PNP switching transistor
|
NXP Semiconductors
|
| PN200 PN200A MMBT200 MMBT200A |
PNP General Purpose Amplifier
PNP General Purpose Amplifier 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| CSA1316BL CSC3329GR |
0.400W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 350 - 700 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 200 - 400 hFE
|
Continental Device India Limited
|
