| PART |
Description |
Maker |
| ZXMN10A07Z ZXMN10A07ZTA |
TV 6C 6#20 SKT PLUG RECP 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
100V N-CHANNEL ENHANCEMENT MODE MOSFET
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| APT6M100K09 |
N-Channel MOSFET 6 A, 1000 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Microsemi Corporation
Microsemi, Corp.
|
| APTM100DUM90G |
Dual Common Source MOSFET Power Module 78 A, 1000 V, 0.105 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTM100TDU35PG |
Triple dual common source MOSFET Power Module 22 A, 1000 V, 0.42 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APT37M100B2 APT37M100B2-09 |
N-Channel MOSFET 37 A, 1000 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| MTP6N60EWC MTP6P20EW MTP6P20EWC MTP3N100E16 MTP3N1 |
6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
33 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD
HiPerFET Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MIC94031BM4 MIC94030BM4 |
1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
SANDISK CORP
|
| BSM191/F |
28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| IRFPG40 |
4.3 A, 1000 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
Power MOSFET(Vdss=1000V, Rds(on)=3.5ohm, Id=4.3A)
|
IRF[International Rectifier]
|
| APT1001R6SLL |
8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-2
|
Microsemi, Corp.
|
|
