| PART |
Description |
Maker |
| EN2007C EN2007 |
Bipolar Transistor, (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single PCP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SD191809 |
Power Transistor (160V , 1.5A)
|
Rohm
|
| 2SD2211 2SD1918 2SD1857A |
Power Transistor (160V , 1.5A)
|
ROHM[Rohm]
|
| 2SB1275 2SB1275-13 |
PNP -1.5A -160V Middle Power Transistor
|
Rohm
|
| DS1339U-33 DS1339U-33_ DS1339 DS1339C-2 DS1339C-2_ |
I2C Serial Real-Time Clock
TRANS NPN BIPOL DUAL 160V SOT363
TRANS NPN DARL 40V SMD SOT-23
TRANSISTOR, NPN, SWITCHING , GENERAL PURPOSE, 3-PIN SOT-23
TRANS NPN 160V 350MW SMD SOT-23
|
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
http://
|
| ZXTN5551Z ZXTN5551ZTA |
160V, SOT89, NPN high voltage transistor
|
Diodes Incorporated
Zetex Semiconductors
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| 2SA1768 2SC4612 2SC4612R 2SC4612T |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK
High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SA1418 2SC3648 2SC3648T 2SA1418T 2SC3648S |
High-Voltage Switching/ Predriver Applications
High-Voltage Switching Predriver Applications
High-Voltage Switching, Predriver Applications
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 700MA I(C) | SOT-89
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 700MA I(C) | SOT-89
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五（巴西）总裁| 700mA的一（c）|采用SOT - 89
|
SANYO[Sanyo Semicon Device]
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| BUK9840-55 |
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 160V; Case Size: 20x30 mm; Packaging: Bulk
TrenchMOS transistor Logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK9514-55 |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 25x35 mm; Packaging: Bulk
TrenchMOS transistor Logic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
