PART |
Description |
Maker |
FDMA1032CZ FDMA1032CZ08 |
20V Complementary PowerTrench? MOSFE 20V Complementary PowerTrench㈢ MOSFE
|
Fairchild Semiconductor
|
IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRFIBC40GLC IRFIBC40GLCPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
|
IRF[International Rectifier]
|
IRFB9N60 IRFB9N60APBF |
Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
|
IRF[International Rectifier]
|
SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V(D-S),Qg,快速开 N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
STB20NM60D |
N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET
|
STMicroelectronics
|
FGB30N6S2D FGH30N6S2D FGP30N6S2D FGB30N6S2DT |
Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC :3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
STSJ2NM60 |
N-CHANNEL 600V - 2.8 OHM - 2A POWER SO-8 ZENER-PROTECTED MDMESH POWER MOSFET N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh⑩ POWER MOSFET N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh POWER MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
International Rectifier, Corp.
|
STB9NK60ZD06 STP9NK60ZD STB9NK60ZD STF9NK60ZD |
N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET N-channel 600V - 0.85楼? - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh垄芒 Power MOSFET
|
STMicroelectronics
|
IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 1.2ohm,身份证\u003d 6.2A
|
IRF[International Rectifier] International Rectifier, Corp.
|