PART |
Description |
Maker |
M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM 64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC Hynix Semiconductor, Inc.
|
KMM466F404CS2-L |
4M X 64 DRAM SODIMM
|
Samsung Semiconductor
|
MT8HTF25664HZ-1GAXX MT8HTF12864HZ-1GAXX |
256M X 64 DDR DRAM MODULE, ZMA200 HALOGEN FREE, MO-224, SODIMM-200 128M X 64 DDR DRAM MODULE, ZMA200 HALOGEN FREE, MO-224, SODIMM-200
|
Cypress Semiconductor, Corp.
|
NT512D64S8HAKWM-7K |
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 SODIMM-200
|
Nanya Technology, Corp.
|
M2N1G64TU8HA2B-3C |
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 GREEN, SODIMM-200
|
Nanya Technology, Corp.
|
HYM7V75A801BLTZG-75 HYM7V75A801BTZG-75 |
8M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 GLASS EPOXY, SODIMM-144
|
Hynix Semiconductor, Inc.
|
NT2GC64B8HA1NS-CG |
256M X 64 DDR DRAM MODULE, ZMA204 ROHS COMPLIANT, SODIMM-204
|
Nanya Technology, Corp.
|
M2N1G64TU8HB0B-3C |
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Nanya Technology, Corp.
|
HYMD18M645AL6-H HYMD18M645AL6-K HYMD18M645A6-H HYM |
SDRAM|DDR|8MX64|CMOS|DIMM|200PIN|PLASTIC 8M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40 4M X 4 OTHER DRAM, 70 ns, PDSO26 16M X 1 EDO DRAM, 60 ns, PDSO24 4M X 4 OTHER DRAM, 50 ns, PDSO26 16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
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