| PART |
Description |
Maker |
| M36DR432C M36DR432CA10ZA6T M36DR432CA85ZA6T M36DR4 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| SST39LF010-45-4C-B3HE SST39VF010-45-4C-B3KE SST39L |
512K X 8 FLASH 2.7V PROM, 70 ns, PBGA48
512K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 3V PROM, 45 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 3V PROM, 45 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 3V PROM, 55 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PBGA48
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
Microchip Technology, Inc.
Microchip Technology Inc.
Silicon Storage Technol...
|
| A28F400BR-B A28F400BR-T |
4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器)
4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引导块闪速存储器)
|
Intel Corp.
|
| M36W0R6040T0 M36W0R6040B0ZAQF M36W0R6040T0ZAQF M36 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C
FLUKE-741B 120 REFURBISHED BY NEWARK
KJA 79C 79#22 PIN RECP
128Kx8 EEPROM
PSoC® Mixed-Signal Array
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式EEPROM
DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM
IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| M36WT8B10ZA6T M36WT8B70ZA6T M36WT864T70ZA6T M36WT8 |
HEATSHRINK BLACK 4IN X 50FT 64兆位4Mb的x16插槽，多银行，突发闪存和8兆位的SRAM12k x16，内存产品多
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product 64兆位4Mb的x16插槽，多银行，突发闪存和8兆位的SRAM12k x16，内存产品多
|
STMicroelectronics N.V.
意法半导
|
| M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和2兆位128K的x16的SRAM，多个存储产
|
STMicroelectronics N.V.
http://
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
| CY62147DV30 CY62147DV30LL-70ZSXI CY62147DV30L CY62 |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44
4-Mbit (256K x 16) Static RAM 4兆位56K × 16）静态RAM
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| SST39LF400A SST39LF200A |
(SST39xF200A/400A/800A) 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Silicon Storage Technology
|
