PART |
Description |
Maker |
CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE 100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
CM1200HA-34H |
1200 A, 1700 V, N-CHANNEL IGBT HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
APTGT30H170T3G |
Full - Bridge Trench Field Stop IGBT Power Module 45 A, 1700 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
SKM400GA174D |
540 A, 1700 V, N-CHANNEL IGBT
|
SEMIKRON INTERNATIONAL
|
FD600R17KF6CB2 |
975 A, 1700 V, N-CHANNEL IGBT
|
|
FF450R17ME3 |
605 A, 1700 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
|
DIM400PHM17-A000 |
400 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor From old datasheet system IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
CM450DXL-34SA |
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
BUP306D Q67040-A4222-A2 BUP306-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 23 A, 1200 V, N-CHANNEL IGBT, TO-218 From old datasheet system IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
APT60GT60JRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. Thunderbolt IGBT & FRED 600V 90A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
Advanced Power Technology
|
APT100GF60JRD |
The Fast IGBTis a new generation of high voltage power IGBTs. ⑩的快速IGBT是一种高压IGBT的新一代 The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Fast IGBT & FRED 600V 140A
|
Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|