PART |
Description |
Maker |
FLL310IQ-3A |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
FLL21E090IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
TC1706 |
3 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
TC1601 |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Sumitomo Electric Industries, Ltd.
|
BUL72A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
VHV12-2.0K1000P VHV12-2.0K1000N |
Ultra small size adjustable output type high voltage power supply 2W to 2.6W high voltage DC-DC converter
|
Volgen Kaga Electronics...
|
CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET L-Band Medium & High Power GaAs FET
|
FUJITSU LTD EUDYNA[Eudyna Devices Inc]
|
BFN37 BFN39 Q62702-F1305 Q62702-F1304 |
From old datasheet system PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
Infineon SIEMENS[Siemens Semiconductor Group]
|