| PART |
Description |
Maker |
| CAT25C32 25C64 CAT25C64U14-1.8TE13 CAT25C64U14-TE1 |
32K/64K-BitSPISerialCMOSE2PROM
32K/64K-Bit SPI Serial CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
CATALYST[Catalyst Semiconductor]
|
| AT27BV1024 AT27BV1024-12JU AT27BV102407 AT27BV1024 |
1-Megabit (64K x 16) Unregulated Battery-Voltage High-Speed OTP EPROM
|
ATMEL Corporation
|
| AT28BV16-25SC AT28BV16-25SI AT28BV16-25TC AT28BV16 |
16K 2K x 8 Battery-Voltage CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 2K X 8 EEPROM 3V, 300 ns, PDSO28
|
ATMEL Corporation
Atmel, Corp.
Atmel Corp.
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| LA5619M |
Lead Battery Charger IC with Battery Voltage Detection Function
|
SANYO[Sanyo Semicon Device]
|
| M27C1024-35C1 M27C1024-90C1 M27C1024-12C6 M27C1024 |
64K X 16 OTPROM, 100 ns, PDSO40
64K X 16 OTPROM, 100 ns, PQCC44
64K X 16 OTPROM, 100 ns, PDIP40
64K X 16 UVPROM, 100 ns, CDIP40
64K X 16 UVPROM, 45 ns, CDIP40
1 MBIT (64KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS
ST Microelectronics
|
| W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| P4C187-20PC P4C187-20PI P4C187-20PM P4C187-20PMB P |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS
64K X 1 STANDARD SRAM, 35 ns, QCC28
64K X 1 STANDARD SRAM, 35 ns, CDIP22
|
Pyramid Semiconductor C...
Pyramid Semiconductor Corporation
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system
Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| CY7C09289 CY7C09289-9AI CY7C09289-9AC CY7C09389-9A |
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 18 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 15 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
DIODE SCHOTTKY SINGLE 75V 200mW 0.45V-vf 150mA-IFM 10mA-IF 5uA-IR SOD-123 3K/REEL 32K X 18 DUAL-PORT SRAM, 18 ns, PQFP100
0.1UF 50V 10% 0805 X7R CERAMIC CAPACITOR 32K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
(CY7C09279 - CY7C09289) 32K/64K X 16/18 Synchronous Dual Port Static RAM
True dual-ported memory cells which allow simultaneous access of the same memory location
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
