| PART |
Description |
Maker |
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| PS7341 PS7341-1B PS7341L-1B PS7341L-1B-E3 PS7341L- |
HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET 1-ch OCMOS FET
Optical Coupled MOS FET photocoupler(MOS 场效应管输出光光隔离器)
HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET 1-ch OCMOS FET 高隔离电引脚DIP OCMOS场效通道OCMOS场效应管
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| 4AJ11 |
Silicon P-Channel Power MOS FET Array
FET Arrays
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| ATF-13XXX ATF-10XXX |
Low Noise Gallium Arsenide FET(低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| BUK9MPP-65PLL |
Dual TrenchPLUS FET Logic Level FET
|
NXP Semiconductors
|
| BUK9MNN-65PKK |
Dual TrenchPLUS FET Logic Level FET
|
NXP Semiconductors N.V.
|
| MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 2SK2504 A5800294 |
Transistors > MOS FET > Power MOS FET
Small switching (100V, 5A)
From old datasheet system
|
ROHM[Rohm]
|
