PART |
Description |
Maker |
HMC816LP4E10 |
SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
|
Hittite Microwave Corporation Hittite Microwave Corpo...
|
HMC618ALP3E |
GaAs SMT pHEMT LOW NOISE AMPLIFIER
|
Analog Devices
|
HMC995LP5GE12 |
GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT
|
Hittite Microwave Corporation
|
HMC564LC4 |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz
|
Hittite Microwave Corporation
|
HMC616LP3 HMC616LP3E 616LP3E |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
|
Hittite Microwave Corporation
|
HMC758LP3 HMC758LP3E |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz
|
Hittite Microwave Corporation
|
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MRFIC1856 |
Dual Band / Dual Mode pHEMT GaAs IPA
|
Motorola
|
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
TGF2018 TGF2018-15 |
180 um Discrete GaAs pHEMT
|
TriQuint Semiconductor
|