| PART |
Description |
Maker |
| 2N3938 |
SCR, V(DRM) = 300V TO 399.9V
|
New Jersey Semi-Conduct...
|
| MP02HBT190-08 MP02HBT190-10 MP02HBT190-12 |
300 A, 800 V, SCR
300 A, 1000 V, SCR
300 A, 1200 V, SCR
|
DYNEX SEMICONDUCTOR LTD
|
| 2N5064AP T107E141 S0510LS253V S1008LS253V EC103A75 |
0.8 A, 200 V, SCR, TO-92
4 A, 500 V, SCR
10 A, 50 V, SCR, TO-220AB
8 A, 100 V, SCR, TO-220AB
0.8 A, 100 V, SCR, TO-92
6 A, 50 V, SCR, TO-220AB
6 A, 100 V, SCR, TO-220AB
4 A, 300 V, SCR, TO-202AB
8 A, 50 V, SCR, TO-202AB
4 A, 50 V, SCR, TO-202AB
10 A, 100 V, SCR, TO-220AB
|
|
| BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|202
|
Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc.
Seme LAB
|
| D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR
1125 A, 1200 V, SCR, TO-200AB
1950 A, 800 V, SCR, TO-200AC
5087 A, 1600 V, SCR
5087 A, 1800 V, SCR
2749 A, 1800 V, SCR
2749 A, 800 V, SCR
2110 A, 3000 V, SCR
2749 A, 600 V, SCR
1895 A, 1000 V, SCR, TO-200AC
2268 A, 1200 V, SCR
5260 A, 1200 V, SCR
1690 A, 800 V, SCR, TO-200AC
2749 A, 1600 V, SCR
5260 A, 1600 V, SCR
2749 A, 1000 V, SCR
1765 A, 1200 V, SCR, TO-200AC
1765 A, 1600 V, SCR, TO-200AC
2749 A, 1200 V, SCR
2749 A, 400 V, SCR
1030 A, 800 V, SCR, TO-200AB
1715 A, 600 V, SCR, TO-200AC
3140 A, 600 V, SCR
2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| T107C1 |
4 A, 300 V, SCR, TO-202AB
|
|
| FT500DL FT500DL-24 FT500DL-4 FT500DL-20 FT500DL-16 |
Phase control SCR. 500A, 400V.
Phase Control SCR 500 Amperes Avg 200-1400 Volts
Phase control SCR. 500A, 1200V.
Phase control SCR. 500A, 200V.
Phase control SCR. 500A, 1000V.
Phase control SCR. 500A, 800V.
Phase control SCR. 500A, 300V.
Phase control SCR. 500A, 500V.
Phase control SCR. 500A, 600V.
Phase control SCR. 500A, 1400V.
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7
800 A, 2000 V, SCR MODULE-7
800 A, 2200 V, SCR MODULE-7
150 A, 800 V, SCR
900 A, 800 V, SCR
900 A, 600 V, SCR
800 A, 800 V, SCR
120 A, 1600 V, SCR
|
Infineon Technologies AG
|
| FT300DL-8 FT300DL FT300DL-10 FT300DL-12 FT300DL-16 |
Phase Control SCR 300 Amperes Avg 200-1200 Volts 相位控制晶闸管三零零安培平均200-1200伏特
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| VSKT170-04 VSKT17010 VSKT170-08 VSKT170-12 VSKT170 |
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
|
Vishay Siliconix
|
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