| PART |
Description |
Maker |
| 3VD395650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD250600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD379600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 2220GC103KAZ1A 1808AA105JAZ1A 1808GC223JAZ1A 1808H |
CAP 0.01UF 2000V 10% X7R SMD-2220 TR-7 FLEXITERM CAPACITOR, CERAMIC, MULTILAYER, 2000 V, X7R, 0.01 uF, SURFACE MOUNT, 2220
High Voltage MLC Chips FLEXITERM
High Voltage MLC Chips FLEXITERM
|
AVX, Corp.
AVX Corporation
|
| SSB-COB6527GW |
65mm x 27mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565mm GREEN CHIPS, 44 CHIPS, 4.2V 220mA
|
LUMEX INC.
|
| 1808GA105JA11A 0805GA105JA11A 1808GA105JA13A 0805G |
High Voltage MLC Chips For 600V to 5000V Applications
High Voltage MLC Chips For 600V to 5000V Applications
For 600V to 5000V Applications
|
AVX Corporation
|
| HIP4081 HIP4081IB |
80V/2.5A Peak/ High Frequency Full Bridge FET Driver
System Basic Chips (SBC); Package: PG-DSO-28; Transceiver: Fault-tollerant CAN ISO 11898 - 3; Voltage Regulator Output: 120 mA; Watchdog: Window
|
Intersil Corporation
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
| T497C685M010BT6215 T497 T497A106K006AH6110 T497A10 |
HIGH GRADE COTS TANTALUM CHIPS
|
KEMET[Kemet Corporation]
|
| OD-880-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
