| PART |
Description |
Maker |
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| 1N3062 1N3064 1N3063 1N3062-15 |
SILICON SWITCHING DIODE 0.075 A, 75 V, SILICON, SIGNAL DIODE, DO-35
Leaded Silicon Diode Switching
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| HVD144A |
Diodes>Switching
Silicon Epitaxial Trench Pin Diode for Antenna Switching
|
Renesas Electronics Corporation
|
| HVL133A |
Diodes>Switching
Silicon Epitaxial Planar Pin Diode for Antenna Switching
|
RENESAS[Renesas Electronics Corporation]
|
| SMBD914 MMBD914 SMBD914/MMBD914 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
| HVU145 |
Diodes>Switching
Silicon Epitaxial Planar Pin Diode for Antenna Switching
|
Renesas Electronics Corporation
|
| BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
Infineon
|
| H7P0601DL H7P0601DS |
Transistors>Switching/MOSFETs
Silicon P Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| SMBD7000 SMBD700007 MMBD7000 |
Silicon Switching Diode Array For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
