| PART |
Description |
Maker |
| CEB05P03 |
-30V P Channel MOS - 30V的P通道马鞍
|
Electro Switch Corp.
|
| MSN3402 |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSN3402A |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSN3400L |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| FDS6690AS08 FDS6690AS |
30V N-Channel PowerTrench㈢ SyncFET⑩
30V N-Channel PowerTrench庐 SyncFET??/a>
30V N-Channel PowerTrench? SyncFET?/a>
|
Fairchild Semiconductor
|
| GSK-2320TE-LZ/105 GSK-2320TE-LZ105 |
30Vp-p max. square Wave
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| UPA610TA PA610TA D11199EJ1V0DS00 UPA610 |
Small signal MOSFET 6-pin MM -30V/0.1A, 2.5V drive
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
From old datasheet system
|
NEC
|
| RJK0305DPB-02-15 |
30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJJ0315DPA-15 |
-30V, -35A, 5.9mΩmax. P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
