| PART |
Description |
Maker |
| 2MBI100J-060 |
TRANSISTOR IGBT POWER MODULE
|
Fuji Semiconductors
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| PS21865 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,20A I(C)
|
Mitsubishi Electric & Electronics USA
|
| FZ1200R12KL4C |
IGBT-Wechselrichter / IGBT-inverter
IGBT Power Module
|
eupec GmbH
|
| FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module
IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|
| VDI75-12S3 VID75-12S3 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 75A条一（c
|
Analog Devices, Inc.
|
| CM100DY12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 100号A一（c
|
Mitsubishi Electric, Corp.
|
| 2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|
| CM200DU12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 200安培我（丙）
|
Powerex, Inc.
|
| VII100-12S4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Aimtec
|
| IEF21KA1 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 15A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五（巴西）国际消费电子展|5A一（c
|
TE Connectivity, Ltd.
|
