| PART |
Description |
Maker |
| IRFZ46N IRFZ46 |
Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 16.5mohm，身份证\u003d 53A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8067HVR |
POWER MOS V 800V 11.5A 0.670 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6030 APT6030BVFR |
POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT50M50JVFR |
POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6025BVR |
POWER MOS V 600V 25A 0.250 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M26WVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 65A 0.026 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT5010JVFR |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
