| PART |
Description |
Maker |
| HYS72T256000HR-3.7-A HYS72T256000HR-3S-A HYS72T256 |
240-Pin Registered DDR SDRAM Modules
|
Qimonda AG
|
| HYS72T128020HR-3.7-B HYS72T128000HR-5-B HYS72T1280 |
240-Pin Registered DDR2 SDRAM Modules
|
Infineon Technologies Corporation
|
| HYB18T1G400BF |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64000HP-3-B HYS72T64000HP-3.7-B HYS72T64000H |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64300HP-3.7-A HYS72T64300HP-3S-A HYS72T12832 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T128000HR-3.7-B HYS72T128000HR-3S-B HYS72T128 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T256220HR-3.7-B HYS72T256220HR-3S-B HYS72T128 |
240-Pin Registered DDR2 SDRAM Modules 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
240-Pin Registered DDR2 SDRAM Modules 256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240
240-Pin Registered DDR2 SDRAM Modules 128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Qimonda AG
|
| M393T6553CZA-CE7 M393T2950CZ3-CCC M393T2950CZ3-CD5 |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC
|
SAMSUNG[Samsung semiconductor]
|
| 70287-1011 0702871011 |
2.54mm (.100") Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 26 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 26 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 70287-1022 0702871022 |
2.54mm (.100") Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 48 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 48 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| HYS64T256022EDL HYS64T256022EDL-2.5-B HYS64T256022 |
200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules
|
Qimonda AG
|
