PART |
Description |
Maker |
CSB546O CSB546R CSB546Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401
|
Continental Device India Limited
|
CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE. PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
MJE350-D |
Plastic Medium Power PNP Silicon Transistor
|
ON Semiconductor
|
BD190 BD186 BD188 |
PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR
|
Motorola Inc MOTOROLA[Motorola, Inc]
|
MJE371G |
Plastic Medium−Power PNP Silicon Transistor
|
ON Semiconductor
|
BD680AG BD682G BD676 BD676A BD682TG BD676AG BD676G |
PLASTIC MEDIUM−POWER SILICON PNP DARLINGTONS
|
ONSEMI[ON Semiconductor]
|
CJF6107 |
34.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 5 hFE.
|
Continental Device India Limited
|
BD136 ON0185 BD140 BD138 BD140-10 |
Plastic Medium Power Silicon PNP Transistor From old datasheet system POWER TRANSISTORS PNP SILICON
|
MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Inc Motorola, Inc.
|
BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd 20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE. TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五(巴西)总裁| 8A条一(c)| TO - 220AB现有
|
Continental Device India Limited Won-Top Electronics Co., Ltd.
|
2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252 MEDIUM POWER TRANSISTOR 中功率晶体管
|
??『绉???′唤?????? UNISONIC TECHNOLOGIES CO LTD Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
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