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AOB27S60 - 600V 27A a MOS Power Transistor

AOB27S60_5366205.PDF Datasheet


 Full text search : 600V 27A a MOS Power Transistor
 Product Description search : 600V 27A a MOS Power Transistor


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27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
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FAIRCHILD[Fairchild Semiconductor]
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FAIRCHILD[Fairchild Semiconductor]
APT6015LVR POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Advanced Power Technology
APT6030 APT6030BVFR POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW[Advanced Power Technology]
APT6011B2VR APT6011LVR POWER MOS V 600V 49A 0.110 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT60M75JVR APT60M75 POWER MOS V 600V 62A 0.075 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW[Advanced Power Technology]
APT6035BVR POWER MOS V 600V 18A 0.350 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW[Advanced Power Technology]
APT6017JLL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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