| PART |
Description |
Maker |
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 |
N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET
N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmeshPower MOSFET
N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STB11NM60FD STB11NM60FD-1 STB11NM60FDT4 STP11NM60F |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmeshPower MOSFET with FAST DIODE N沟道600V 0.40ohm - 11A 220 / TO-220FP/I2PAK FDmesh？功率MOSFET，快速二极管
N-CHANNEL 600V - 0.40 OHM - 11A TO-220/TO-220FP/I2PAK/D2PAK FDMESH MOSFET (WITH FAST DIODE)
|
STMicroelectronics N.V.
ST Microelectronics
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| STP11NM60 |
N-CHANNEL 600V - 0.4Ohm - 11A TO-220 Mdmesh Power MOSFET
|
SGS Thomson Microelectronics
|
| APT6017WVR |
POWER MOS V 600V 31.5A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT6015LVR |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6015B2VR APT6015 |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6015JVR |
POWER MOS V 600V 35A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6025BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 25A 0.250 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT6017B2LL APT6017LLL |
POWER MOS 7 600V 35A 0.170 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
