| PART |
Description |
Maker |
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| CFH2162-P3 |
Power GaAs FET
|
Mimix Broadband
|
| MGF0904A_1 MGF0904A MGF0904A1 |
L,S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLK017WF |
X, Ku Band Power GaAs FET
|
Eudyna Devices Inc
|
| HWL30NPA HWL30NPA-V1-15 |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| TIM7785-45SL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM1414-7NBSP |
MICROWAVE POWER GAAS FET
|
TOSHIBA
|
| TIM3742-4UL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM1414-8 TIM1414-8L |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
