| PART |
Description |
Maker |
| HTM4A60S |
INSULATED TYPE SENSITIVE GATE TRIAC (TO-126ML PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CR8PM CR8PM-12 |
12.56 A, 600 V, SCR
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
ITT, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
|
| BCR3AM |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 低功率的用途非绝缘型，平面型钝
|
Mitsubishi Electric, Corp.
|
| BCR3KM BCR3KM-12 |
From old datasheet system
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR8CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
