| PART |
Description |
Maker |
| 2SK427R 2SK427Q 2SK427T 2SK427U |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 1.7MA I(DSS) | SPAK
TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 7.3MA I(DSS) | SPAK
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 15V的五（巴西）直| 5mA的我（直）| SPAK
|
Toshiba, Corp.
|
| MAX742CPP 1157 MAX742 MAX742EPP MAX742CWP MAX742EW |
Switch-Mode Regulator with 5V to ±12V or ±15V Dual Output
Switch-Mode Regulator with 5V to 【12V or 【15V Dual Output
From old datasheet system
Switch-Mode Regulator with 5V to 12V or 15V Dual Output
|
Maxim Integrated Produc...
MAXIM[Maxim Integrated Products]
|
| LTC1151_05 LTC1151 LTC1151CN8 LTC1151CSW LTC115105 |
Dual ±15V Zero-Drift Operational Amplifier
Dual 【15V Zero-Drift Operational Amplifier
|
LINER[Linear Technology]
|
| RC4195T RC4195N RM4195K RM4195T_883B RM4195T RC419 |
Fixed 15V Dual Tracking Voltage Regulator
|
FAIRCHILD[Fairchild Semiconductor]
|
| EN2841 |
N-Channel JFET, 15V, 5 to 24mA, 50mS, CP
|
ON Semiconductor
|
| 2SK715W 2SK715 |
N-Channel Junction Silicon FET AM Tuner, RF Amplifier Applications
TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 15MA I(DSS) | SPAK
|
SANYO
|
| IRG4RC10U IRG4RC10UTR IRG4RC10UTRL IRG4RC10UTRR |
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
| MP7529A |
15V CMOS Dual Buffered Multiplying 8-Bit Digital-to-Analog Converter
|
Exar Corporation
|
| FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼?
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| IRG4BC10UD IRG4BC10UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
