| PART |
Description |
Maker |
| RA03M8894M RA03M8894M-101 RDHA710SE10A2FK |
889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
Radiation Hardended, Solid-State Relay with Buffered Inputs
|
IRF
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MX043G MX043J MX043 |
Radiation Hardended MOSFET
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| IRUH330125BPA |
Radiation Hardended Ultra Low Dropout Adjustable Positive Linear Regulator
|
International Rectifier
|
| 53250 |
RADIATION TOLERANT 40VDC - 2A SOLID STATE RELAY
|
MICROPAC[Micropac Industries]
|
| IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB |
RADIATION HARDENED
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
|
International Rectifier
|
| HS-RTX2010 HS-RTX2010RH HS8-RTX2010RH HS9-RTX2010R |
Radiation Hardened Real Time Express??Microcontroller
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, CQFP84
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, UUC84
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
Radiation Hardened Real Time Express Microcontroller
|
Advanced Analogic Technologies, Inc.
Intersil, Corp.
Intersil Corporation
|
| Q62702-P429 SFH520 SFH520A Q62702-P419 |
Strahlungsdetektoren Radiation Detectors
---Strahlungsdetektoren ---Radiation Detectors
From old datasheet system
メ-モ-ャ-Strahlungsdetektoren メ-モ-ャ-Radiation Detectors
α-β-γ-Strahlungsdetektoren α-β-γ-Radiation Detectors
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 5962F0152101QXC 5962F0152101VXC ISL74422ARHQF ISL7 |
Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers BUF OR INV BASED MOSFET DRIVER, CDFP16
Radiation Hardened 9A. Non-Inverting Power MOSFET Drivers 辐射加固9A条。非反向功率MOSFET驱动
Power MOSFET Drivers, Rad-Hard, 9A, Non-Inverting
Radiation Hardened 9A/ Non-Inverting Power MOSFET Drivers
|
Intersil, Corp.
Intersil Corporation
|
| ACS374DMSR ACS374D ACS374HMSR FN3997 ACS374MS ACS3 |
Radiation Hardened Octal D Flip-Flop/ Three-State
Radiation Hardened Octal D Flip-Flop, Three-State
From old datasheet system
Radiation Hardened Octal D Flip-Flop Three-State
D Flip Flop, Octal, Tri-State, Rad-Hard, Advanced Logic, CMOS
|
INTERSIL[Intersil Corporation]
|
