PART |
Description |
Maker |
KM641003C |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
AT27BV020-90VI AT27BV020-90VC AT27BV020-90TI AT27B |
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PDSO32 High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-PDIP -55 to 125 256K X 8 OTPROM, 90 ns, PQCC32 High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PBGA42 High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 150 ns, PDSO32 2-Megabit 256K x 8 Unregulated Battery-Voltage High Speed OTP EPROM
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位)分位,写延迟LVTTL高速同步静态随机存储器56 × 18位)
|
Sony, Corp.
|
IDT70V7319S IDT70V7319S200DDI IDT70V7319S133BC IDT |
HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
HM6207H |
256K High Speed SRAM
|
Hitachi
|
EDI8833P EDI8833C EDI8833LP |
HIGH SPEED 256K MONOLITHIC SRAM
|
Electronic Theatre Controls, Inc. ETC[ETC]
|
EM614163 EM614163A EM614163A-30 EM614163A-35 EM614 |
256K X 16 HIGH SPEED EDO DRAM
|
ETC[ETC]
|
LY61L25616 LY61L25616E LY61L25616GL LY61L25616GV L |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
LY6125616 LY6125616E LY6125616I LY6125616LL LY6125 |
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
AT27BV4096 AT27BV4096-12JC AT27BV4096-12JI AT27BV4 |
High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-PDIP -55 to 125 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125 4 Megabit 256K x 16 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel Corp. ATMEL[ATMEL Corporation]
|