PART |
Description |
Maker |
L2SK801LT1G L2SK801LT3G |
Small Signal MOSFET 310 mAmps, 60 Volts N?Channel SOT?3
|
Leshan Radio Company
|
BSS138PW |
60 V, 320 mA N-channel Trench MOSFET 60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
FDD6632 |
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-Channel Logic Level UltraFET Trench Power MOSFET 30V/ 9A/ 90m N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mOhm
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FDD5810 FDD581007 FDD5810-F085 |
N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm N-Channel Logic Level Trench㈢ MOSFET N-Channel Logic Level Trench? MOSFET
|
Fairchild Semiconductor
|
APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET 20V N & P-Channel PowerTrench MOSFETs 20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
RO2053A-1 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
RP1053-2 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
PAK-I |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
PAK-II |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
|