| PART |
Description |
Maker |
| 55GN01FA12 ENA1113A 55GN01FA |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single SSFP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SC5231A-8-TL-E 2SC5231A-9-TL-E |
RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP
|
ON Semiconductor
|
| SB007W03S |
30V/ 70mA Rectifier
30V, 70mA Rectifier
Silicon Diode
|
SANYO[Sanyo Semicon Device]
N/A
|
| 2SC506009 |
Power transistor (90 -10V, 3A)
|
Rohm
|
| 2SC4863 2SC4863-5 2SC4863-3 |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 70MA I(C) | SOT-323 晶体管|晶体管|叩| 8V的五（巴西）总裁|提供70mA一（c）|SOT - 323
VHF to UHF Wide-Band Low-Noise Amp Applications
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 2SB1396 2SB1396S |
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 3A I(C) | SOT-89
DC-DC Converter,Motor Driver Applications
|
Sanyo Semicon Device
|
| FC803 |
30V/ 70mA Rectifier
30V, 70mA Rectifier
|
SANYO[Sanyo Semicon Device]
|
| 2SD2212 2SD1764 A5800371 |
Medium Power Transistor (Motor, Relay or Solenoid drive) (60 10V, s2A)
From old datasheet system
|
ROHM
|
| DTA125TA DTA143XLA DTA143XAA DTA144GFA DTB114GF DT |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
晶体管| 50V五（巴西）总裁| 100mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 500mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|资深大律师，71VAR
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 30mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 30mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 100mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 50MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 50mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁| 100mA的一（c）| SOT - 23封装
|
Air Cost Control
Delta Electronics, Inc.
Yageo, Corp.
Rohm Co., Ltd.
Electronic Theatre Controls, Inc.
Intel, Corp.
Diodes, Inc.
|
| IRG4BC30W-S IRG4BC30WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
