PART |
Description |
Maker |
AO3162 |
600V,0.034A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
FDS6961AZ FDS6961AZL86Z FDS6961AZL99Z |
3.5 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SO-8 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO Dual N-Channel Logic Level PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
FDW2515N FDW2515NZ |
CAP CER 68000PF 100V 10% X7R1210 5.8 A, 20 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Common Drain N-Channel 2.5V specified PowerTrench MOSFET Dual N-Channel 2.5V Specified PowerTrench MOSFET
|
Glenair, Inc. FAIRCHILD[Fairchild Semiconductor]
|
ZVN4206AV |
N-channel MOSFET N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET MOSFET N-CH 60V 600MA TO-92 600 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Zetex Semiconductors Diodes Incorporated Zetex Semiconductor PLC
|
FDS4435 FDS4435D84Z FDS4435F011 |
P-Channel Logic Level PowerTrenchTM MOSFET 8800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 9000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 8.8 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD SEMICONDUCTOR CORP
|
SUP45N03-13L |
N-Channel Enhancement-Mode Transistor N-Channel 30-V (D-S), 175C MOSFET N-Channel MOSFET N-Channel 30-V (D-S), 175C MOSFET
|
VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
ZXM64P035G ZXM64P035GTA ZXM64P035GTC |
P-channel MOSFET 35V P-CHANNEL ENHANCEMENT MODE MOSFET 3800 mA, 35 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC
|
IRFP040 IRF9622 IRF9612 IRFP362 IRFP343 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.5A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 1.5AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB TRANSISTOR|MOSFET|P-CHANNEL|200VV(BR)DSS|1.5AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|50VV(BR)DSS|40AI(D)|TO-247AC
|
International Rectifier, Corp.
|
AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package 20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET 30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET -12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM 1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32 x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp. Advanced Micro Devices, Inc. Spansion, Inc.
|
FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W 600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
STD2N50 STD2N50-1 STD2N50T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 晶体管| MOSFET的| N沟道| 500V五(巴西)直|甲(丁)|52 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR -通道增强型功率MOS器件 STD2N50-1 I-PAK MOSFET-TRANSIT N-CHANNEL MOSFET
|
STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|