| PART |
Description |
Maker |
| FQN1N60C |
N-Channel QFETMOSFET 600V, 0.3A, 11.5
|
Fairchild Semiconductor
|
| FQD16N25C |
N-Channel QFETMOSFET 250V, 16A, 270m
|
Fairchild Semiconductor
|
| FDS3672 FDS3672NL |
N-Channel PowerTrench MOSFET 100V/ 7.5A/ 22m
N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
| FDPF3860T |
100V N-Channel PowerTrench MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
N-Channel PowerTrench㈢ MOSFET 100V, 20A, 38.2mヘ
N-Channel PowerTrench? MOSFET 100V, 20A, 38.2mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF5EA1310 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)
THRU-HOLE MOUNT (LCC-28) 100V, N-CHANNEL
|
IRF[International Rectifier]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| HUFA75631SK8 HUFA75631SK8T |
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFETPower MOSFET
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | SO
|
Fairchild Semiconductor Corporation
|
| FQD19N10L FQU19N10L FQD19N10LTF FQD19N10LTM |
GIGATRUE CAT6 UNIVERSAL JACK, WHITE
100V LOGIC N-Channel MOSFET
100V N-Channel Logic Level QFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 20A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 3A条（丁）| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
