| PART |
Description |
Maker |
| CPD80V |
Chip Form: HIGH VOLTAGE SWITCHING DIODE
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| BAS70-07W BAS7007W Q62702-A1186 |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BAS21HT1G |
High Voltage Switching Diode 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
ON Semiconductor
|
| MMBD3004S MMBD3004S-7 MMBD3004 MMBD3004S- |
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes, Inc.
DIODES[Diodes Incorporated]
http://
|
| BAS40-07W BAS4007W |
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
| NSVBAS21TMR6T1G NSVBAS21TMR6T2G |
High Voltage Switching Diode
|
ON Semiconductor
|
