| PART |
Description |
Maker |
| H8205A |
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
|
Hi-Sincerity Mocroelectronics
|
| H9926S H9926CS |
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
|
HSMC CORP.
Hi-Sincerity Mocroelectronics
|
| H8205 |
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
|
Hi-Sincerity Mocroelectronics
|
| TSM9966DCX6 |
20V Dual N-Channel Enhancement Mode MOSFET
|
Taiwan Semiconductor Company, Ltd
|
| ZXMD63N02X ZXMD63N02XTA ZXMD63N02XTC |
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| ZXMN2088DE6TA |
20V Dual SOT23-6 N-channel enhancement mode MOSFET
|
TY Semiconductor Co., Ltd
|
| ZXMN2B14FHTA ZXMN2B14FH |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY
20V SOT23 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| H6968CTS |
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) Battery Switch, ESD Protected)
|
HSMC
Hi-Sincerity Mocroelectronics
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| SST3585 SST358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
