PART |
Description |
Maker |
Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器,红外Lumineszenzdiode GaAlA红外发射 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH OSRAM GmbH
|
Q62702-P5053 SFH4860 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
134144 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
190150 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH List of Unclassifed Manufacturers
|
115161H |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package From old datasheet system
|
Siemens Semiconductor G... SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package 砷化红外发光二极管的GaAIAs呢?3毫米(T.1)包 GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package From old datasheet system GaAs/GaAlAs IR Emitting Diode in ? 3 mm (T?1)Package GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package GaAs/GaAlAs IR Emitting Diode in 庐3 mm (T.1) Package GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix] Vishay Telefunken
|
Q62703Q0517 |
GaAIAs-IR-Lumineszenzdiode (880 nm)
|
OSRAM GmbH
|
Q62702P5302 Q62702P5303 SFH4881 |
IR-Lumineszenzdiode (880 nm) im TO-46-Geh?use
|
OSRAM GmbH
|
Q65110A2464 Q65110A2975 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
OSRAM GmbH
|