| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| LR1012 LR1012L-XX-AF5-R |
HIGH OPERATING VOLTAGE CMOS VOLTAGE REGULATOR
|
Unisonic Technologies
|
| KM6161002C KM6161002C-12 KM6161002C-15 KM6161002C- |
CMOS SRAM
64K x 16 Bit High-Speed CMOS Static RAM (5.0V Operating) Operated at Commercial and Industrial Temperature Range
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| FF-1585-40 |
Operating Voltage = 250/480 V~, 50 / 60 Hz Operating Voltage = 125/208 V~, 50 - 400 Hz
|
JMK Inc.
|
| HD-6409 HD6409 HD3-6409-9 HD1-6409-9 HD9P6409-9 FN |
Unijunction Transistor; Transistor Polarity:N Channel; Power Dissipation:600mW; Operating Temp. Max:175 C; Operating Temp. Min:-65 C
CMOS Manchester Encoder-Decoder(CMOS Manchester编码译码
From old datasheet system
|
Harris Corporation
INTERSIL[Intersil Corporation]
|
| KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| LL-0221-30 |
Operating Voltage = 115-250 Vac Operating Current = 30 Amperes
|
JMK Inc.
|
| FF-1199-6B |
Operating Voltage: 125 / 250 v~ Operating Current (Max): 6.0 AMP
|
JMK Inc.
|
| LL-1319-13M |
Operating Voltage = DC to 250 Vac Operating Current (Max)= 13A
|
JMK Inc.
|
| DN6845S |
Hall IC (Operating Supply Voltage Range Vcc=3.6 to 16V, Operating in One Way Magnetic Field)
|
Panasonic
|
