| PART |
Description |
Maker |
| 15ETH03S 15ETH03 15ETH03-1 |
300V 15A Ultra-Fast Discrete Diode in a D2-Pak (UltraFast) package
300V 15A Ultra-Fast Discrete Diode in a TO-262 package
300V 15A Ultra-Fast Discrete Diode in a TO-220AC package
Ultrafast Rectifier
|
IRF[International Rectifier]
|
| FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
PNP Low Sat Transistor
TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
Zetex Semiconductor PLC
|
| 222233860274 222233860103 |
MicroMonitor Chip 电容270NF 300V
CAPACITOR 10NF 300V 电容10NF 300V
|
Vishay Intertechnology, Inc.
|
| 30EPH03 |
300V 30A Ultra-Fast Discrete Diode in a TO-247 (2 LEAD) package
Ultrafast Rectifier
|
IRF[International Rectifier]
|
| PO38 |
Bipolar PNP Device in a Hermetically sealed TO39
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-39
|
Seme LAB
|
| MJ15023 MJ15023-D |
Power 16A 200V Discrete PNP
Silicon Power Transistors
|
ON Semiconductor
|
| 2N5883 2N5883-D |
Power 25A 60V Discrete PNP
Complementary Silicon High-Power Transistors
|
ON Semiconductor
|
| FGPF50N30T FGPF50N30TTU |
Discrete IGBT
300V, 50A PDP IGBT
|
Fairchild Semiconductor
|
| 2DB1386Q-13 2DB1386R 2DB1386R-13 2DB1386Q-13R |
20V PNP MEDIUM POWER TRANSISTOR IN SOT89
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes Incorporated
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| CENW51 CENW57 CENW51A CENW55 CENW56 CENW92 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-237VAR 晶体管|晶体管|进步党| 300V五（巴西）总裁| 500mA的一（c）|37VAR
|
SMSC, Corp.
|
