| PART |
Description |
Maker |
| SIGC07T60NC |
IGBTs - HV Chips - SIGC07T60NC, 600V, 6A
|
Infineon
|
| SIGC109T120R3L |
IGBTs - HV Chips - SIGC109T120R3L, 1200V, 100A
|
Infineon
|
| SIGC109T120R3 |
IGBTs - HV Chips - SIGC109T120R3, 1200V, 100A
|
Infineon
|
| SIGC15T60UN |
IGBTs - HV Chips - SIGC15T60UN, 600V, 15A
|
Infineon
|
| SIGC25T60NC |
IGBTs - HV Chips - SIGC25T60NC, 600V, 30A
|
Infineon
|
| IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
|
International Rectifier, Corp.
|
| IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
| BM-10EG88MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-41EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
