PART |
Description |
Maker |
BB644 Q62702-B0907 Q62702-B0905 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance)
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG Siemens Group
|
BB641 Q62702-B792 SIEMENSAG-Q62702-B792 |
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance) From old datasheet system
|
SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
|
G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343 |
InGaAs PIN photodiode with preamp Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; Case Size: 30x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 25x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; Case Size: 22x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 25x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; Case Size: 25x50 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 25x40 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 30x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk Optoelectronic 光电 InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
HAMAMATSU[Hamamatsu Corporation] NXP Semiconductors N.V. Hamamatsu Photonics K.K.
|
GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
AD6432 AD6432AST |
GSM 3 V Transceiver IF Subsystem Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series:20110; Packaging:Cut Tape TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP44
|
Analog Devices, Inc.
|
AD644J AD644L AD644K AD644S |
Dual High Speed/ Implanted BiFET Op Amp Ceramic Multilayer Capacitor; Capacitance:22000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series 10 UF 10% 10V TANT ESR=2R CAP SMT (0805)
|
Analog Devices, Inc.
|
BB565 Q62702-B0873 Q62702-B0869 |
From old datasheet system Silicon Variable Capacitance Diode (For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)
|
SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
|
SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system GaAs Infrared Emitter Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
SA57031-XX SA57031-25 SA57031-26 SA57031-31 SA5703 |
Micropower 150 mA, low-noise, low dropout linear regulator with on/off 微功耗为150 mA,低噪声,低压差线性稳压器的开/ RECTIFIER BRIDGE 25A 800V 300A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY CAP CERAMIC MONO .1UF 50V 10% Ceramic Multilayer Capacitor; Capacitance:22pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:1.2pF; Capacitance Tolerance: 0.5pF; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0603; Termination:SMD RoHS Compliant: Yes Ceramic Multilayer Capacitor; Capacitance:1.5pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor Ceramic Multilayer Capacitor; Capacitance:1pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
|
TE Connectivity, Ltd. NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
HVU359 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
NP0080TAT1G NP0120TAT1G NP0160TAT1G NP0080TA |
Low Voltage Low Capacitance Surge Protection Device Low Capacitance Protector
|
ON Semiconductor
|