| PART |
Description |
Maker |
| SFF120-28Q |
9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET 9.2 A, 100 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Solid State Devices, Inc.
|
| NTP52N10 NTP52N10G |
Power MOSFET 60 Amps, 100 Volts
|
ON Semiconductor
|
| MTW45N10E-D |
Power MOSFET 45 Amps, 100 Volts
|
ON Semiconductor
|
| 6N10L-TN3-R 6N10G-TN3-R |
6 Amps, 100 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| UT12N10 UT12N10G-TN3-R UT12N10L-TN3-R |
12 Amps, 100 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
| NTP85N03 NTB85N03 NTB85N03T4 |
Power MOSFET 85 Amps / 28 Volts
Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
|
ONSEMI[ON Semiconductor]
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| MTP12P10 MTP12P10G |
Power MOSFET 12 Amps, 100 Volts P−Channel TO−220
|
ON Semiconductor
|
| MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
| MMDF3N03HDR2 MMDF3N03HD MMDF3N03HD-D |
Power MOSFET 3 Amps, 30 Volts 4.1 A, 30 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 3 Amps, 30 Volts N-Channel SO-8, Dual
|
ONSEMI[ON Semiconductor]
|
| NTB75N03-06T4G NTB75N03-06G NTB75N03-006 NTB75N03- |
75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, CASE 418AA-01, D2PAK-3
Power MOSFET 75 Amps, 30 Volts
|
ON Semiconductor
|
|
