PART |
Description |
Maker |
IDT71124 IDT7112415YGI8 IDT7112420YGI8 IDT71124S12 |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
|
Integrated Device Techn...
|
AN1078 |
ST7 PWM DUTY CYCLE SWITCH IMPLEMENTING TRUE 0% & 100% DUTY CYCLE
|
SGS Thomson Microelectronics
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ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列 EIGHT DARLINGTON ARRAYS
|
STMicroelectronics N.V. Allegro MicroSystems STMICROELECTRONICS[STMicroelectronics]
|
WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Cypress Semiconductor
|
WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Ramtron International Corporation
|
IR2085SPBF IR2085S |
HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE, HALF-BRIDGE DRIVER 高速,100V的,自振0%的占空比,半桥驱动 HIGH SPEED/ 100V/ SELF OSCILLATING 50% DUTY CYCLE/ HALF-BRIDGE DRIVER HIGH SPEED 100V SELF OSCILLATING 50% DUTY CYCLE HALF-BRIDGE DRIVER
|
International Rectifier, Corp. IRF[International Rectifier]
|
MH88437 MH88437-P MH88437AD-P MH88437AD-PI MH88437 |
0.3-6.0V; data access arrangement. For FAX/modem, electronic point of sale, security system Data Access Arrangement Advance Information 数据访问安排进展信息
|
Mitel Semiconductor Mitel Networks Corporation Mitel Networks, Corp.
|
CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IS61VPS10018-166TQ IS61VPS10018-200B IS61VPS51232- |
1024K x 18 synchronous pipeline, single-cycle deselect static RAM 512K x 32 synchronous pipeline, single-cycle deselect static RAM 512K x 36 synchronous pipeline, single-cycle deselect static RAM
|
Integrated Silicon Solution Inc
|
CY7C1261V18 CY7C1261V18-300BZC CY7C1261V18-300BZI |
36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
RN5RK1A RN5RK301A RN5RK301A-TL RN5RK301A-TR RN5RK3 |
VFM step-up DC/DC converter. Output voltage 3.2V. Internal Lx Tr. driver. Duty cycle 77%. Standard taping type TR VFM step-up DC/DC converter. Output voltage 3.1V. EXternal Tr. driver. Duty cycle 77%. Standard taping type TR VFM step-up DC/DC converter. Output voltage 3.1V. Internal Lx Tr. driver. Duty cycle 55%. Standard taping type TR VFM step-up DC/DC converter. Output voltage 3.1V. Internal Lx Tr. driver. Duty cycle 77%. Standard taping type TR VFM step-up DC/DC converter. Output voltage 3.3V. EXternal Tr. driver. Duty cycle 77%. Standard taping type TR VFM Set-up DC/DC Converter SOT-23-5 VFM STEP-UP DC/DC CONVERTER VFM step-up DC/DC converter. Output voltage 3.3V. EXternal Tr. driver. Duty cycle 77%. Taping type TL VFM step-up DC/DC converter. Output voltage 3.1V. Internal Lx Tr. driver. Duty cycle 77%. Taping type TL VFM step-up DC/DC converter. Output voltage 3.1V. Internal Lx Tr. driver. Duty cycle 55%. Taping type TL VFM step-up DC/DC converter. Output voltage 3.1V. EXternal Tr. driver. Duty cycle 77%. Taping type TL VFM step-up DC/DC converter. Output voltage 3.2V. Internal Lx Tr. driver. Duty cycle 77%. Taping type TL
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RICOH[RICOH electronics devices division]
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