| PART |
Description |
Maker |
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| AMS3402 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| TSM2314CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., Ltd
|
| ME2302A29T |
High-density cell design for ultra low on-resistance
|
SUNMATE electronic Co.,...
|
| WPM3012 WPM3012-3 WPM3012-3TR |
Single P-Channel, -30V, -3.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| QM3001K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
| 2N7000 |
High density cell design for low RDS(ON) Voltage controlled small signal switch
|
TY Semiconductor Co., Ltd
|
| ISPLSI1016E ISPLSI1016E-100LJI ISPLSI1016E-125LJI |
IN-SYSTEM PROGRAMMABLE HIGH DENSITY PLD
IC,COMPLEX-EEPLD,64-CELL,13NS PROP DELAY,LDCC,44PIN,PLASTIC
|
LATTICE[Lattice Semiconductor]
|
| STP4435A |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST2304SRG |
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9437 |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
