| PART |
Description |
Maker |
| AMS2319 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS2304 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| LS14500EX |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell
|
SAFT
|
| ISPLSI1016E ISPLSI1016E-100LJI ISPLSI1016E-125LJI |
IN-SYSTEM PROGRAMMABLE HIGH DENSITY PLD
IC,COMPLEX-EEPLD,64-CELL,13NS PROP DELAY,LDCC,44PIN,PLASTIC
|
LATTICE[Lattice Semiconductor]
|
| STN4440 |
STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4407 |
The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4346 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN1810 |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4480 |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
